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The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification is that it has very high input impedance and low output impedance .
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
Block diagram of a basic class-D amplifier. Note: For clarity, signal periods are not shown to scale. A class-D amplifier, or switching amplifier, is an electronic amplifier in which the amplifying devices (transistors, usually MOSFETs) operate as electronic switches, and not as linear gain devices as in other amplifiers.
Date/Time Thumbnail Dimensions User Comment; current: 16:08, 31 August 2012: 720 × 720 (7 KB): Michael9422 {{subst:Upload marker added by en.wp UW}} {{Information |Description = {{en|A simple NPN transistor amplifier circuit diagram with transistor labels.}} |Source = I created a postscript file, and converted it too SVG using the pstoedit program. |Date = ...
The only terminal remaining is the source. This is a common-source FET circuit. The analogous bipolar junction transistor circuit may be viewed as a transconductance amplifier or as a voltage amplifier. (See classification of amplifiers). As a transconductance amplifier, the input voltage is seen as modulating the current going to the load.
Common circuit diagram symbols (US ANSI symbols) An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may ...
The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks, [2] [3] [4] enabling the majority of the world's cellular voice and data traffic. [5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to ...
The 2N7000 is an N-channel, enhancement-mode MOSFET used for low-power switching applications. [1] The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use. [2] Packaged in a TO-92 enclosure, the 2N7000 is rated to withstand 60 volts and can switch 200 millamps.