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  2. Fin field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Fin_field-effect_transistor

    A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.

  3. Multigate device - Wikipedia

    en.wikipedia.org/wiki/Multigate_device

    Different FinFET structures, which can be modeled by BSIM-CMG. BSIMCMG106.0.0, [65] officially released on March 1, 2012 by UC Berkeley BSIM Group, is the first standard model for FinFETs. BSIM-CMG is implemented in Verilog-A. Physical surface-potential-based formulations are derived for both intrinsic and extrinsic models with finite body doping.

  4. Kill A Watt - Wikipedia

    en.wikipedia.org/wiki/Kill_A_Watt

    This Kill A Watt model P4400 is displaying a current draw of 10.27 Amperes in this mode. Prodigit Model 2000MU (UK version), shown in use and displaying a reading of 10 Watts being consumed by the appliance. The Kill A Watt (a pun on kilowatt) is an electricity usage monitor manufactured by Prodigit Electronics and sold by P3 International.

  5. Iddq testing - Wikipedia

    en.wikipedia.org/wiki/Iddq_testing

    The current consumed in the state is commonly called Iddq for Idd (quiescent) and hence the name. Iddq testing uses the principle that in a correctly operating quiescent CMOS digital circuit , there is no static current path between the power supply and ground, except for a small amount of leakage.

  6. 5 nm process - Wikipedia

    en.wikipedia.org/wiki/5_nm_process

    In 2017, IBM revealed that it had created "5 nm" silicon chips, [15] using silicon nanosheets in a gate-all-around configuration (GAAFET), a break from the usual FinFET design. The GAAFET transistors used had 3 nanosheets stacked on top of each other, covered in their entirety by the same gate, just like FinFETs usually have several physical ...

  7. Leakage (electronics) - Wikipedia

    en.wikipedia.org/wiki/Leakage_(electronics)

    Leakage current is also any current that flows when the ideal current is zero. Such is the case in electronic assemblies when they are in standby, disabled, or "sleep" mode ( standby power ). These devices can draw one or two microamperes while in their quiescent state compared to hundreds or thousands of milliamperes while in full operation.