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The physical properties of gallium are highly anisotropic, i.e. have different values along the three major crystallographic axes a, b, and c (see table), producing a significant difference between the linear (α) and volume thermal expansion coefficients. The properties of gallium are strongly temperature-dependent, particularly near the ...
Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronics, [9] [10] [11] high-power
Gallium(III) telluride (Ga 2 Te 3) is a chemical compound classified as a metal telluride. At room temperature gallium(III) telluride is an odorless, black, brittle crystalline solid and is a semiconductor of the III-VI type that crystallizes in a lattice structure .
Galinstan is a brand name for an alloy composed of gallium, indium, and tin which melts at −19 °C (−2 °F) and is thus liquid at room temperature. [4] [5] In scientific literature, galinstan is also used to denote the eutectic alloy of gallium, indium, and tin, which melts at around +11 °C (52 °F). [5]
Lamy was able to produce larger amounts of the new metal and determined most of its chemical and physical properties. [29] [30] Indium is the fourth element of the boron group but was discovered before the third, gallium, and after the fifth, thallium.
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The table below is a summary of the key physical properties of the group 12 elements. ... though gallium participates in semi-conductors such as gallium arsenide. ...