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A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The power MOSFET is the most common power device in the world, due to its low gate drive power, fast switching speed, and advanced paralleling capability. [16] It has a wide range of power electronic applications, such as portable information appliances , power integrated circuits, cell phones , notebook computers , and the communications ...
Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .
Silicon carbide (SiC) is also gaining popularity in power ICs and has found some application as the raw material for blue LEDs and is being investigated for use in semiconductor devices that could withstand very high operating temperatures and environments with the presence of significant levels of ionizing radiation.
High power silicon carbide electronic devices are expected to find use in the design of protection circuits used for motors, actuators, and energy storage or pulse power systems. [26] It also exhibits thermoluminescence, [27] making it useful in radiation dosimetry. [28]
A power module or power electronic module provides the physical containment for several power components, usually power semiconductor devices. These power semiconductors (so-called dies ) are typically soldered or sintered on a power electronic substrate that carries the power semiconductors, provides electrical and thermal contact and ...
The device may comprise a silicon on insulator device in which a buried oxide is formed below a thin semiconductor layer. If the channel region between the gate dielectric and the buried oxide region is very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the ...
Wind power systems optimum torque is obtained either through a gearbox or direct drive technologies that can reduce the size of the power electronics device. [35] Electric power can be generated through photovoltaic cells by using power electronic devices. The produced power is usually then transformed by solar inverters. Inverters are divided ...