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A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
A few of the properties of semiconductor materials were observed throughout the mid-19th and first decades of the 20th century. The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers.
Pages in category "Semiconductor material types" The following 11 pages are in this category, out of 11 total. This list may not reflect recent changes. B.
Media in category "Semiconductor materials" This category contains only the following file. Pyrite from Ampliación a Victoria Mine, Navajún, La Rioja, Spain 2.jpg 1,344 × 1,576; 1.12 MB
Semiconductors are materials whose electronic properties can be controlled by adding small amounts of impurities to them. Subcategories This category has the following 10 subcategories, out of 10 total.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in
The yield point of organic semiconductors is the stress or strain level at which the material starts to deform permanently. After this point, the material loses its elasticity and undergoes permanent deformation. Yield strength is usually measured by conducting tensile testing.
A fourth element is often added to a I-III-VI 2 material to tune the bandgap for maximum solar cell efficiency. A representative example is copper indium gallium selenide (CuIn x Ga (1– x ) Se 2 , E g = 1.7–1.0 eV for x = 0–1 [ 1 ] ), which is used in copper indium gallium selenide solar cells .