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The backward diode has the unusual property that the so-called reverse bias direction actually has more current flow than the so-called forward bias. The forward I–V characteristic is the same as that of an ordinary P–N diode. The breakdown starts when reverse voltage is applied. In the case of Zener breakdown, it starts at a particular ...
English: Band diagram of a backward diode. Energy of an electron is on the vertical axis, position in the device is on the horizontal axis. The backward diode has the unusual property that the so-called reverse bias direction actually has more current flow than the so-called forward bias.
Under zero- or reverse-bias (the "off" state), a PIN diode has a low capacitance. The low capacitance will not pass much of an RF signal. Under a forward bias of 1 mA (the "on" state), a typical PIN diode will have an RF resistance of about 1 ohm, making it a good conductor of RF. Consequently, the PIN diode makes a good RF switch.
English: Diode I-V diagram. Includes three main areas of operation: breakdown, reverse-biased, and forward-biased. Vbr denotes the breakdown voltage, and Vd denotes the voltage that is typically considered "on" (conducting current).
Diagram of a simple circuit with an inductance L and a flyback diode D.The resistor R represents the resistance of the inductor's windings. A flyback diode is any diode connected across an inductor used to eliminate flyback, which is the sudden voltage spike seen across an inductive load when its supply current is suddenly reduced or interrupted.
These can be made to conduct in reverse bias (backward), and are correctly termed reverse breakdown diodes. This effect called Zener breakdown, occurs at a precisely defined voltage, allowing the diode to be used as a precision voltage reference. The term Zener diodes is colloquially applied to several types of breakdown diodes, but strictly ...
The I-V curve for a diode showing avalanche and Zener breakdown.. In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener.
Band-bending for p–n diode in reverse bias Quasi-Fermi levels in reverse-biased p–n diode. In reverse bias the occupancy level for holes again tends to stay at the level of the bulk p-type semiconductor while the occupancy level for electrons follows that for the bulk n-type. In this case, the p-type bulk band edges are raised relative to ...