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Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
English: A diagram of the structure of an NPN BJT, showing the collector-emitter voltage (V CE), base-emitter voltage (V BE) and the collector, base and emitter currents and directions (I C, I B and I E)
Energy band diagram of a simple NPN w:bipolar junction transistor in forward-active mode showing electron energy versus position. The w:depletion regions of the emitter-base and base-collector junctions are marked.
Energy band diagram of a simple NPN w:bipolar junction transistor under equilibrium showing electron energy versus position. The w:depletion regions of the emitter-base and base-collector junctions are marked.
The band diagram of an NPN BJT in equilibrium: Date: 20 February 2007: Source: Own drawing, done in Inkscape: Author: ... Bipolar junction transistor; Global file usage.
Figure 1: Basic NPN common base circuit (neglecting biasing details). In electronics, a common-base (also known as grounded-base) amplifier is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a current buffer or voltage amplifier.
English: The band diagram of an NPN BJT in active mode. العربية: ... Bipolar junction transistor; Global file usage. The following other wikis use this file: