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The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.
Jan Czochralski (Polish pronunciation: [ˈjan t͡ʂɔˈxralskʲi]; 23 October 1885 – 22 April 1953) was a Polish chemist who invented the Czochralski method, which is used for growing single crystals and in the production of semiconductor wafers. It is still used in over 90 percent of all electronics in the world that use semiconductors. [1]
Specific techniques to produce large single crystals (aka boules) include the Czochralski process (CZ), Floating zone (or Zone Movement), and the Bridgman technique. Dr. Teal and Dr. Little of Bell Telephone Laboratories were the first to use the Czochralski method to create Ge and Si single crystals. [7]
In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique [2] and the Czochralski process, which result in a cylindrical rod of material. In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and ...
Jan Czochralski, Polish chemist credited with inventing the Czochralski method, a technique of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold) and salts (1916). The method is still used in over 90 percent of all electronics in the ...
The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal. [1]
An element of surface undergoes no change and does not advance normal to itself except during the passage of a step, and then it advances by the step height. It is useful to consider the step as the transition between two adjacent regions of a surface which are parallel to each other and thus identical in configuration—displaced from each ...
The major advantages is crucibleless growth that prevents contamination of the silicon from the vessel itself and therefore an inherently high-purity alternative to boule crystals grown by the Czochralski method. The concentrations of light impurities, such as carbon (C) and oxygen (O 2) elements, are extremely low.