Search results
Results From The WOW.Com Content Network
The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.
Jan Czochralski (Polish pronunciation: [ˈjan t͡ʂɔˈxralskʲi]; 23 October 1885 – 22 April 1953) was a Polish chemist who invented the Czochralski method, which is used for growing single crystals and in the production of semiconductor wafers. It is still used in over 90 percent of all electronics in the world that use semiconductors. [1]
The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal. [1]
In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and slowly extracted. The molten silicon grows on the seed crystal in a crystalline fashion. As the seed is extracted the silicon solidifies and eventually a large, cylindrical boule is produced. [3]
Single-crystal growth methods tree diagram Basic crystal growth methods can be separated into four categories based on what they are artificially grown from: melt, solid, vapor, and solution. [ 2 ] Specific techniques to produce large single crystals (aka boules ) include the Czochralski process (CZ) , Floating zone (or Zone Movement), and the ...
Gordon Kidd Teal (January 10, 1907 – January 7, 2003) was an American engineer. He invented a method of applying the Czochralski method to produce extremely pure germanium single crystals used in making greatly improved transistors. [1]
Most true synthetic alexandrite is grown by the Czochralski method, known as “pulling”.Another method is a “floating zone”, developed in 1964 by an Armenian scientist Khachatur Saakovich Bagdasarov, of the Russian (former Soviet) Institute of Crystallography, Moscow.
The major advantages is crucibleless growth that prevents contamination of the silicon from the vessel itself and therefore an inherently high-purity alternative to boule crystals grown by the Czochralski method. The concentrations of light impurities, such as carbon (C) and oxygen (O 2) elements, are extremely low.