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The electron mobility is defined by the equation: =. where: E is the magnitude of the electric field applied to a material,; v d is the magnitude of the electron drift velocity (in other words, the electron drift speed) caused by the electric field, and
Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and increased concentration of localized states increases the mobility as well. Charge transport in the same material may have to be described by ...
The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.
For example, the mobility of the sodium ion (Na +) in water at 25 °C is 5.19 × 10 −8 m 2 /(V·s). [1] This means that a sodium ion in an electric field of 1 V/m would have an average drift velocity of 5.19 × 10 −8 m/s. Such values can be obtained from measurements of ionic conductivity in solution.
In general, carriers will exhibit ballistic conduction when where is the length of the active part of the device (e.g., a channel in a MOSFET). λ M F P {\displaystyle \lambda _{\rm {MFP}}} is the mean free path for the carrier which can be given by Matthiessen's rule , written here for electrons:
There are two recognized types of charge carriers in semiconductors.One is electrons, which carry a negative electric charge.In addition, it is convenient to treat the traveling vacancies in the valence band electron population as a second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron.
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
In a p-n junction diode, electrons and holes are the minority charge carriers in the p-region and the n-region, respectively. In an unbiased junction, due to the diffusion of charge carriers, the diffusion current, which flows from the p to n region, is exactly balanced by the equal and opposite drift current. [1]