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DRAM chips during the early 1970s had three-transistor cells, before single-transistor cells became standard since the mid-1970s. [17] [15] CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24]
The Atkinson–Shiffrin model (also known as the multi-store model or modal model) is a model of memory proposed in 1968 by Richard Atkinson and Richard Shiffrin. [1] The model asserts that human memory has three separate components: a sensory register, where sensory information enters memory,
Long-term memory (LTM) is the stage of the Atkinson–Shiffrin memory model in which informative knowledge is held indefinitely. It is defined in contrast to sensory memory , the initial stage, and short-term or working memory , the second stage, which persists for about 18 to 30 seconds.
The memtransistor (a blend word from Memory Transfer Resistor) is an experimental multi-terminal passive electronic component that might be used in the construction of artificial neural networks. [1] It is a combination of the memristor and transistor technology. [ 2 ]
Modern computer memory is implemented as semiconductor memory, [5] [6] where data is stored within memory cells built from MOS transistors and other components on an integrated circuit. [7] There are two main kinds of semiconductor memory: volatile and non-volatile. Examples of non-volatile memory are flash memory and ROM, PROM, EPROM, and ...
In 1974, Baddeley and Hitch [5] introduced and made popular the multicomponent model of working memory.This theory proposes a central executive that, among other things, is responsible for directing attention to relevant information, suppressing irrelevant information and inappropriate actions, and for coordinating cognitive processes when more than one task must be done at the same time.
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip .
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory . [ 2 ]