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The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. [1]
The effect of reverse saturation current on the I-V curve of a crystalline silicon solar cell are shown in the figure to the right. Physically, reverse saturation current is a measure of the "leakage" of carriers across the p–n junction in reverse bias.
is the reverse saturation current, the current that flows when the diode is reverse biased (that is, is large and negative). n {\displaystyle n} is an ideality factor introduced to model a slower rate of increase than predicted by the ideal diode law.
Reverse biased: For a bias between breakdown and 0 V, the reverse current is very small and asymptotically approaches -I s. For a normal P–N rectifier diode, the reverse current through the device is in the micro-ampere (μA) range. However, this is temperature dependent, and at sufficiently high temperatures, a substantial amount of reverse ...
Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, [1] although this is obviously a function of size).
is the reverse saturation current of the base–emitter diode (on the order of 10 −15 to 10 −12 amperes) is the base–emitter voltage; is the diffusion constant for electrons in the p-type base; W is the base width
Solar cell output voltage for two light-induced currents I L expressed as a ratio to the reverse saturation current I 0 [52] and using a fixed ideality factor m of 2. [53] Their emf is the voltage at their y-axis intercept. Solving the illuminated diode's above simplified current–voltage relationship for output voltage yields:
Reverse leakage current in a semiconductor device is the current when the device is reverse biased.. Under reverse bias, an ideal semiconductor device should not conduct any current, however, due to attraction of dissimilar charges, the positive side of the voltage source draws free electrons (majority carriers in the n-region) away from the P-N junction.