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  2. Stacking fault - Wikipedia

    en.wikipedia.org/wiki/Stacking_fault

    There are two types of stacking faults caused by Frank partial dislocations: intrinsic and extrinsic. An intrinsic stacking fault forms by vacancy agglomeration and there is a missing plane with sequence ABCA_BA_BCA, where BA is the stacking fault. [5] An extrinsic stacking fault is formed from interstitial agglomeration, where there is an ...

  3. Intrinsic and extrinsic properties - Wikipedia

    en.wikipedia.org/wiki/Intrinsic_and_extrinsic...

    An extrinsic property is not essential or inherent to the subject that is being characterized. For example, mass is an intrinsic property of any physical object , whereas weight is an extrinsic property that depends on the strength of the gravitational field in which the object is placed.

  4. Doping (semiconductor) - Wikipedia

    en.wikipedia.org/wiki/Doping_(semiconductor)

    Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.

  5. Extrinsic semiconductor - Wikipedia

    en.wikipedia.org/wiki/Extrinsic_semiconductor

    An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor ...

  6. Surface states - Wikipedia

    en.wikipedia.org/wiki/Surface_states

    Interfaces between two materials, such as a semiconductor-oxide or semiconductor-metal interface; Interfaces between solid and liquid phases. Generally, extrinsic surface states cannot easily be characterized in terms of their chemical, physical or structural properties.

  7. Intensive and extensive properties - Wikipedia

    en.wikipedia.org/wiki/Intensive_and_extensive...

    The distinction between intensive and extensive properties has some theoretical uses. For example, in thermodynamics, the state of a simple compressible system is completely specified by two independent, intensive properties, along with one extensive property, such as mass. Other intensive properties are derived from those two intensive variables.

  8. Charge carrier density - Wikipedia

    en.wikipedia.org/wiki/Charge_carrier_density

    The carrier concentration can be calculated by treating electrons moving back and forth across the bandgap just like the equilibrium of a reversible reaction from chemistry, leading to an electronic mass action law. The mass action law defines a quantity called the intrinsic carrier concentration, which for undoped materials:

  9. Intrinsic semiconductor - Wikipedia

    en.wikipedia.org/wiki/Intrinsic_semiconductor

    The current which will flow in an intrinsic semiconductor consists of both electron and hole current. That is, the electrons which have been freed from their lattice positions into the conduction band can move through the material. In addition, other electrons can hop between lattice positions to fill the vacancies left by the freed electrons.