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Wafers grown using materials other than silicon will have different thicknesses than a silicon wafer of the same diameter. Wafer thickness is determined by the mechanical strength of the material used; the wafer must be thick enough to support its own weight without cracking during handling. The tabulated thicknesses relate to when that process ...
Wafer size has grown over time, from 25 mm (1 inch) in 1960, to 50 mm (2 inches) in 1969, 100 mm (4 inches) in 1976, 125 mm (5 inches) in 1981, 150 mm (6 inches) in 1983 and 200 mm in 1992. [41] [42] In the era of 2-inch wafers, these were handled manually using tweezers and held manually for the time required for a given process.
MOSFET (PMOS and NMOS) demonstrations ; Date Channel length Oxide thickness [1] MOSFET logic Researcher(s) Organization Ref; June 1960: 20,000 nm: 100 nm: PMOS: Mohamed M. Atalla, Dawon Kahng
Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.) Process technology node – size of the smallest features that the facility is capable of etching onto the wafers. Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
Current mass production processes use crystal ingots between 100 and 300 mm (3.9 and 11.8 in) in diameter, grown as cylinders and sliced into wafers. The round shape characteristic of these wafers comes from single-crystal ingots usually produced using the Czochralski method. Silicon wafers were first introduced in the 1940s. [19] [20]
The codes given in the chart below usually tell the length and width of the components in tenths of millimeters or hundredths of inches. For example, a metric 2520 component is 2.5 mm by 2.0 mm which corresponds roughly to 0.10 inches by 0.08 inches (hence, imperial size is 1008).