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The locomotive uses Toshiba-made 3-phase AC motors, powered through Insulated-gate bipolar transistor (IGBT) control. It is a dual-voltage locomotive, designed to operate on either 3 kV DC or 25 kV AC. Like the earlier Classes 7E1, 7E4, 9E, 11E, 15E and 18E electric locomotives, these engines have driving cabs at one end only since they would ...
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It was developed to combine high efficiency with fast switching.
An insulated gate bipolar transistor traction system and direct-drive motors both manufactured by Toshiba were experimentally tested on car MoHa 103-502 (car #4) on ten-car set KeYo304 based on the Keiyō Line from May 2002; the car was originally manufactured in December 1975 by Nippon Sharyo.
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. [1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: high input impedance of the insulated gate means almost no gate current is required
NEC and Toshiba used this process for their 4 Mb DRAM memory chips in 1986. [47] Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4 Mb DRAM memory chips in 1987. [37] Toshiba's 4 Mb EPROM memory chip in 1987. [47] Hitachi, Mitsubishi and Toshiba used this process for their 1 Mb SRAM memory chips in 1987. [47]
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
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