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At high frequencies, the PIN diode appears as a resistor whose resistance is an inverse function of its forward current. Consequently, PIN diode can be used in some variable attenuator designs as amplitude modulators or output leveling circuits. PIN diodes might be used, for example, as the bridge and shunt resistors in a bridged-T attenuator.
A PIN diode has a central un-doped, or intrinsic, layer, forming a p-type/intrinsic/n-type structure. [42] They are used as radio frequency switches and attenuators. They are also used as large-volume, ionizing-radiation detectors and as photodetectors. PIN diodes are also used in power electronics, as
A 2-D tetra-lateral PSD is capable of providing continuous position measurement of the incident light spot in 2-D. It consists of a single square PIN diode with a resistive layer. When there is an incident light on the active area of the sensor, photocurrents are generated and collected from four electrodes placed along each side of the square ...
Reverse voltage blocking device, commonly modeled as a switch in series with a voltage source, usually 0.7 VDC. The model can be enhanced to include a junction resistance, in order to accurately predict the diode voltage drop across the diode with respect to current flow. Up to 3000 amperes and 5000 volts in a single silicon device.
Absorption is the active process in photodiodes, solar cells and other semiconductor photodetectors, while stimulated emission is the principle of operation in laser diodes. Besides light excitation, carriers in semiconductors can also be generated by an external electric field, for example in light-emitting diodes and transistors.
In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode. If a sufficient forward bias is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector.
A photodiode is a PIN structure or p–n junction.When a photon of sufficient energy strikes the diode, it creates an electron–hole pair. This mechanism is also known as the inner photoelectric effect.
Layers of a PIN diode. (+ -) The PIN photodiode was invented by Jun-ichi Nishizawa in 1950. Jun-ichi Nishizawa (西澤 潤一, Nishizawa Jun'ichi, September 12, 1926 – October 21, 2018) [1] was a Japanese engineer and inventor. He is known for his electronic inventions since the 1950s, including the PIN diode, static induction transistor ...