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This advantage is an enabling technology in DDR3's transfer speed. DDR3 modules can transfer data at a rate of 800–2133 MT/s using both rising and falling edges of a 400–1066 MHz I/O clock. This is twice DDR2's data transfer rates (400–1066 MT/s using a 200–533 MHz I/O clock) and four times the rate of DDR (200–400 MT/s using a 100 ...
DDR3 advances extended the ability to preserve internal clock rates while providing higher effective transfer rates by again doubling the prefetch depth. The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 ...
DDR SDRAM operating with a 100 MHz clock is called DDR-200 (after its 200 MT/s data transfer rate), and a 64-bit (8-byte) wide DIMM operated at that data rate is called PC-1600, after its 1600 MB/s peak (theoretical) bandwidth. Likewise, 12.8 GB/s transfer rate DDR3-1600 is called PC3-12800. Some examples of popular designations of DDR modules:
As with all DDR SDRAM generations, commands are still restricted to one clock edge and command latencies are given in terms of clock cycles, which are half the speed of the usually quoted transfer rate (a CAS latency of 8 with DDR3-800 is 8/(400 MHz) = 20 ns, exactly the same latency of CAS2 on PC100 SDR SDRAM).
It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.
The DDR3 JEDEC standard for VLP DIMM height is around 0.740 inches (18.8 mm). These will fit vertically in ATCA systems. Full-height 240-pin DDR2 and DDR3 DIMMs are all specified at a height of around 1.18 inches (30 mm) by standards set by JEDEC. These form factors include 240-pin DIMM, SO-DIMM, Mini-DIMM and Micro-DIMM. [16]
The physical phenomena on which the device relies (such as spinning platters in a hard drive) will also impose limits; for instance, no spinning platter shipping in 2009 saturates SATA revision 2.0 (3 Gbit/s), so moving from this 3 Gbit/s interface to USB 3.0 at 4.8 Gbit/s for one spinning drive will result in no increase in realized transfer rate.
Since it is proving difficult to further increase the internal clock speed of memory chips, these chips increase the transfer rate by transferring more data words on each clock cycle DDR2 SDRAM – Transfers 4 consecutive words per internal clock cycle; DDR3 SDRAM – Transfers 8 consecutive words per internal clock cycle.