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  2. RCA clean - Wikipedia

    en.wikipedia.org/wiki/RCA_clean

    The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.

  3. Piranha solution - Wikipedia

    en.wikipedia.org/wiki/Piranha_solution

    Molecular models of the different molecules active in Piranha solution: peroxysulfuric acid (H 2 SO 5) and hydrogen peroxide (H 2 O 2). Piranha solution, also known as piranha etch, is a mixture of sulfuric acid (H 2 SO 4) and hydrogen peroxide (H 2 O 2). The resulting mixture is used to clean organic residues off substrates, for example ...

  4. Etching (microfabrication) - Wikipedia

    en.wikipedia.org/wiki/Etching_(microfabrication)

    Etching tanks used to perform Piranha, hydrofluoric acid or RCA clean on 4-inch wafer batches at LAAS technological facility in Toulouse, France. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer ...

  5. Semiconductor device fabrication - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device...

    Cleaning by solvents such as acetone, trichloroethylene or ultrapure water sometimes while spinning the wafer; Piranha solution; RCA clean; Wafer scrubbing; Spin cleaning [119] Jet spray cleaning [119] Cryogenic aerosol [120] Megasonics [121] Immersion batch cleaning [122] Surface passivation; Photolithography. Photoresist coating (often as a ...

  6. Microfabrication - Wikipedia

    en.wikipedia.org/wiki/Microfabrication

    RCA-1 clean in ammonia-peroxide solution removes organic contamination and particles; RCA-2 cleaning in hydrogen chloride-peroxide mixture removes metallic impurities. Sulfuric acid-peroxide mixture (a.k.a. Piranha) removes organics. Hydrogen fluoride removes native oxide from silicon surface. These are all wet cleaning steps in solutions.

  7. Front end of line - Wikipedia

    en.wikipedia.org/wiki/Front_end_of_line

    Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]

  8. Wafer fabrication - Wikipedia

    en.wikipedia.org/wiki/Wafer_fabrication

    The silicon wafers start out blank and pure. The circuits are built in layers in clean rooms. First, photoresist patterns are photo-masked in micrometer detail onto the wafers' surface. The wafers are then exposed to short-wave ultraviolet light and the unexposed areas are thus etched away and cleaned.

  9. Silanization of silicon and mica - Wikipedia

    en.wikipedia.org/wiki/Silanization_of_silicon...

    Piranha solution in particular constitutes quite a harsh treatment that can potentially damage the integrity of the silicon surface. Finlayson-Pitts et al. investigated the effect of certain treatments on silicon and concluded that both the roughness (3-5 Å) and the presence of scattered large particles were preserved after 1 cycle of plasma ...