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A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
In May 2016, Nvidia released its GeForce 10 series GPUs based on the Pascal architecture, which incorporates TSMC's "16 nm" FinFET technology and Samsung's "14 nm" FinFET technology. [36] [37] [needs update] In June 2016, AMD released its Radeon RX 400 GPUs based on the Polaris architecture, which incorporated "14 nm" FinFET technology from ...
FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley) [60] [61] 2001 15 nm: FinFET Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu: University of California (Berkeley) [60] [62] December 2002: 10 nm: FinFET Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor University of California ...
In 1998, the team developed the first N-channel FinFETs and successfully fabricated devices down to a 17 nm process. The following year, they developed the first P-channel FinFETs. [12] They coined the term "FinFET" (fin field-effect transistor) in a December 2000 paper. [13] In current usage the term FinFET has a less precise definition.
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
A process design kit (PDK) is a set of files used within the semiconductor industry to model a fabrication process for the design tools used to design an integrated circuit. The PDK is created by the foundry defining a certain technology variation for their processes.
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
The current consumed in the state is commonly called Iddq for Idd (quiescent) and hence the name. Iddq testing uses the principle that in a correctly operating quiescent CMOS digital circuit , there is no static current path between the power supply and ground, except for a small amount of leakage.