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A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley) [60] [61] 2001 15 nm: FinFET Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu: University of California (Berkeley) [60] [62] December 2002: 10 nm: FinFET Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor University of California ...
In May 2016, Nvidia released its GeForce 10 series GPUs based on the Pascal architecture, which incorporates TSMC's "16 nm" FinFET technology and Samsung's "14 nm" FinFET technology. [36] [37] [needs update] In June 2016, AMD released its Radeon RX 400 GPUs based on the Polaris architecture, which incorporated "14 nm" FinFET technology from ...
FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
Julius Edgar Lilienfeld, who proposed the concept of a field-effect transistor in 1925.. The concept of a field-effect transistor (FET) was first patented by the Austro-Hungarian born physicist Julius Edgar Lilienfeld in 1925 [1] and by Oskar Heil in 1934, but they were unable to build a working practical semiconducting device based on the concept.
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode.
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.